NTGS1135PT1G

MOSFET P-CH 8V 4.6A 6-TSOP
NTGS1135PT1G P1
NTGS1135PT1G P1
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ON Semiconductor ~ NTGS1135PT1G

Part Number
NTGS1135PT1G
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 8V 4.6A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTGS1135PT1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTGS1135PT1G
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.2V, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 6V
Vgs (Max) ±6V
FET Feature -
Power Dissipation (Max) 970mW (Ta)
Rds On (Max) @ Id, Vgs 31 mOhm @ 4.6A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6

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