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See Product Specifications for product details.
| Part Number | PHT6NQ10T,135 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 10V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
PHT6N06LT,135 | NXP USA Inc. | MOSFET N-CH 55V 2.5A SOT223 | - | 0 | Details |
 |
PHT6N06T,135 | NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | - | 0 | Details |
 |
PHT6NQ10T,135 | Nexperia USA Inc. | MOSFET N-CH 100V 3A SOT223 | 8000 | Details |