Images are for reference only.
See Product Specifications for product details.
| Part Number | APTM50DAM19G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 163A |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 492nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 22400pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 1136W (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5 mOhm @ 81.5A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP6 |
| Package / Case | SP6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APTM08TAM04PG | Microsemi Corporation | MOSFET 6N-CH 75V 120A SP6-P | - | 0 | Details |
 |
APTM08TDUM04PG | Microsemi Corporation | MOSFET 6N-CH 75V 120A SP6-P | 0 | Details | |
|
APTM100A12STG | Microsemi Corporation | MOSFET 2N-CH 1000V 68A LP8W | 0 | Details | |
|
APTM100A13DG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | - | 0 | Details |
 |
APTM100A13SCG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | - | 4 | Details |
 |
APTM100A13SG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | - | 46 | Details |
 |
APTM100A18FTG | Microsemi Corporation | MOSFET 2N-CH 1000V 43A SP4 | - | 0 | Details |
|
APTM100A23SCTG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | 0 | Details | |
|
APTM100A23STG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | - | 0 | Details |
|
APTM100A40FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 21A SP1 | - | 0 | Details |
|
APTM100A46FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 19A SP1 | 0 | Details | |
 |
APTM100AM90FG | Microsemi Corporation | MOSFET 2N-CH 1000V 78A SP6 | - | 0 | Details |