Images are for reference only.
See Product Specifications for product details.
| Part Number | APT10SCD65KCT |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) (per Diode) | 17A |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200µA @ 650V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT1001R1BN | Microsemi Corporation | MOSFET N-CH 1KV 10.5A TO247AD | 0 | Details | |
|
APT1001RBN | Microsemi Corporation | MOSFET N-CH 1KV 11A TO247AD | 0 | Details | |
 |
APT10021JFLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | - | 0 | Details |
 |
APT10021JLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | - | 14 | Details |
|
APT1002RBNG | Microsemi Corporation | MOSFET N-CH 1KV 8A TO247AD | - | 0 | Details |
 |
APT10035B2FLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | - | 3 | Details |
 |
APT10035B2LLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | - | 0 | Details |
 |
APT10035JLL | Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | - | 0 | Details |
 |
APT10035LLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A TO-264 | - | 7 | Details |
 |
APT1003RBLLG | Microsemi Corporation | MOSFET N-CH 1000V 4A TO-247 | - | 30 | Details |
 |
APT1003RKLLG | Microsemi Corporation | MOSFET N-CH 1000V 4A TO-220 | 0 | Details | |
 |
APT10045B2LLG | Microsemi Corporation | MOSFET N-CH 1000V 23A T-MAX | - | 6 | Details |