VWM200-01P

MOSFET 6N-CH 100V 210A V2
VWM200-01P P1
VWM200-01P P1
Images are for reference only.
See Product Specifications for product details.

IXYS ~ VWM200-01P

Part Number
VWM200-01P
Manufacturer
IXYS
Description
MOSFET 6N-CH 100V 210A V2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
VWM200-01P.pdf VWM200-01P PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number VWM200-01P
Part Status Obsolete
FET Type 6 N-Channel (3-Phase Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 210A
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case V2-PAK
Supplier Device Package V2-PAK

Related Products

All Products