IRLU3636PBF

MOSFET N-CH 60V 50A IPAK
IRLU3636PBF P1
IRLU3636PBF P2
IRLU3636PBF P1
IRLU3636PBF P2
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Infineon Technologies ~ IRLU3636PBF

Part Number
IRLU3636PBF
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 50A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRLU3636PBF.pdf IRLU3636PBF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IRLU3636PBF
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 143W (Tc)
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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