Images are for reference only.
See Product Specifications for product details.
| Part Number | IRF6610TRPBF |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 66A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 15A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ SQ |
| Package / Case | DirectFET™ Isometric SQ |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IRF60B217 | Infineon Technologies | MOSFET N-CH 60V 60A | 2918 | Details | |
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IRF60DM206 | Infineon Technologies | MOSFET N-CH 60V 130A | 0 | Details | |
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IRF60R217 | Infineon Technologies | MOSFET N-CH 60V 58A | 1911 | Details | |
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IRF610 | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | 0 | Details |
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IRF6100 | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIP-FET | 0 | Details | |
|
IRF6100PBF | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIPFET | 0 | Details | |
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IRF610L | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | 0 | Details |
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IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | 0 | Details |
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IRF610PBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | 0 | Details |
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IRF610S | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 0 | Details |
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IRF610SPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 262 | Details |
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IRF610STRL | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 0 | Details |