Images are for reference only.
See Product Specifications for product details.
| Part Number | IRF60DM206 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6530pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric ME |
| Package / Case | DirectFET™ Isometric ME |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IRF60B217 | Infineon Technologies | MOSFET N-CH 60V 60A | 2918 | Details | |
 |
IRF60DM206 | Infineon Technologies | MOSFET N-CH 60V 130A | 0 | Details | |
 |
IRF60R217 | Infineon Technologies | MOSFET N-CH 60V 58A | 1911 | Details | |
 |
IRF610 | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | 0 | Details |
 |
IRF6100 | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIP-FET | 0 | Details | |
|
IRF6100PBF | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIPFET | 0 | Details | |
 |
IRF610L | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | 0 | Details |
 |
IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | 0 | Details |
 |
IRF610PBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | 0 | Details |
 |
IRF610S | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 0 | Details |
 |
IRF610SPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 262 | Details |
 |
IRF610STRL | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 0 | Details |