IPSH4N03LA G

MOSFET N-CH 25V 90A IPAK
IPSH4N03LA G P1
IPSH4N03LA G P1
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Infineon Technologies ~ IPSH4N03LA G

Part Number
IPSH4N03LA G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 25V 90A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPSH4N03LA G.pdf IPSH4N03LA G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPSH4N03LA G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 60A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

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