IPP65R190E6XKSA1

MOSFET N-CH 650V 20.2A TO220
IPP65R190E6XKSA1 P1
IPP65R190E6XKSA1 P1
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Infineon Technologies ~ IPP65R190E6XKSA1

Part Number
IPP65R190E6XKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 20.2A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPP65R190E6XKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 247 pcs
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Product Parameter

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Part Number IPP65R190E6XKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3

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