IPN60R2K1CEATMA1

MOSFET NCH 600V 3.7A SOT223
IPN60R2K1CEATMA1 P1
IPN60R2K1CEATMA1 P1
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Infineon Technologies ~ IPN60R2K1CEATMA1

Part Number
IPN60R2K1CEATMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 3.7A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPN60R2K1CEATMA1.pdf IPN60R2K1CEATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPN60R2K1CEATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Vgs (Max) ±20V
FET Feature Super Junction
Power Dissipation (Max) 5W (Tc)
Rds On (Max) @ Id, Vgs 2.1 Ohm @ 800mA, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case SOT-223-3

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