IPN60R3K4CEATMA1

MOSFET NCH 600V 2.6A SOT223
IPN60R3K4CEATMA1 P1
IPN60R3K4CEATMA1 P1
Images are for reference only.
See Product Specifications for product details.

Infineon Technologies ~ IPN60R3K4CEATMA1

Part Number
IPN60R3K4CEATMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 2.6A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPN60R3K4CEATMA1.pdf IPN60R3K4CEATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number IPN60R3K4CEATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V
Vgs (Max) ±20V
FET Feature Super Junction
Power Dissipation (Max) 5W (Tc)
Rds On (Max) @ Id, Vgs 3.4 Ohm @ 500mA, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA

Related Products

All Products