IPL60R180P6AUMA1

MOSFET N-CH 600V 4VSON
IPL60R180P6AUMA1 P1
IPL60R180P6AUMA1 P1
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Infineon Technologies ~ IPL60R180P6AUMA1

Part Number
IPL60R180P6AUMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 600V 4VSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPL60R180P6AUMA1.pdf IPL60R180P6AUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPL60R180P6AUMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 22.4A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 9A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-VSON-4
Package / Case 4-PowerTSFN

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