IPD70P04P409ATMA1

MOSFET P-CH TO252-3
IPD70P04P409ATMA1 P1
IPD70P04P409ATMA1 P1
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Infineon Technologies ~ IPD70P04P409ATMA1

Part Number
IPD70P04P409ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD70P04P409ATMA1.pdf IPD70P04P409ATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPD70P04P409ATMA1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Rds On (Max) @ Id, Vgs 8.9 mOhm @ 70A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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