IPD50R800CE

MOSFET N CH 500V 5A TO252
IPD50R800CE P1
IPD50R800CE P1
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Infineon Technologies ~ IPD50R800CE

Part Number
IPD50R800CE
Manufacturer
Infineon Technologies
Description
MOSFET N CH 500V 5A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD50R800CE.pdf IPD50R800CE PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPD50R800CE
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Vgs (Max) ±20V
FET Feature Super Junction
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 1.5A, 13V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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