IPA80R1K4CEXKSA2

MOSFET NCH 800V 3.9A TO220-3
IPA80R1K4CEXKSA2 P1
IPA80R1K4CEXKSA2 P1
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Infineon Technologies ~ IPA80R1K4CEXKSA2

Part Number
IPA80R1K4CEXKSA2
Manufacturer
Infineon Technologies
Description
MOSFET NCH 800V 3.9A TO220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPA80R1K4CEXKSA2.pdf IPA80R1K4CEXKSA2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 995 pcs
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Product Parameter

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Part Number IPA80R1K4CEXKSA2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2.3A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack

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