Images are for reference only.
See Product Specifications for product details.
| Part Number | IGT60R190D1SATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 157pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-3 |
| Package / Case | 8-PowerSFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
IGT60R070D1ATMA1 | Infineon Technologies | IC GAN FET 600V 60A 8HSOF | - | 4065 | Details |
|
IGT60R190D1SATMA1 | Infineon Technologies | IC GAN FET 600V 23A 8HSOF | - | 7507 | Details |