FDME910PZT

MOSFET P CH 20V 8A MICROFET
FDME910PZT P1
FDME910PZT P1
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Fairchild/ON Semiconductor ~ FDME910PZT

Part Number
FDME910PZT
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET P CH 20V 8A MICROFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDME910PZT PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FDME910PZT
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2110pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2.1W (Ta)
Rds On (Max) @ Id, Vgs 24 mOhm @ 8A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MicroFet 1.6x1.6 Thin
Package / Case 6-PowerUFDFN

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