FDFMA3N109

MOSFET N-CH 30V 2.9A MICRO2X2
FDFMA3N109 P1
FDFMA3N109 P1
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Fairchild/ON Semiconductor ~ FDFMA3N109

Part Number
FDFMA3N109
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 30V 2.9A MICRO2X2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDFMA3N109 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 18000 pcs
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Product Parameter

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Part Number FDFMA3N109
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Vgs (Max) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.5W (Ta)
Rds On (Max) @ Id, Vgs 123 mOhm @ 2.9A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-MicroFET (2x2)
Package / Case 6-VDFN Exposed Pad

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