VS-GB50YF120N

IGBT 1200V 66A 330W ECONO
VS-GB50YF120N P1
VS-GB50YF120N P1
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Vishay Semiconductor Diodes Division ~ VS-GB50YF120N

Part Number
VS-GB50YF120N
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 1200V 66A 330W ECONO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-GB50YF120N PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number VS-GB50YF120N
Part Status Active
IGBT Type -
Configuration -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 66A
Power - Max 330W
Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 75A
Current - Collector Cutoff (Max) 250µA
Input Capacitance (Cies) @ Vce -
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package ECONO2 4PACK

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