VS-GB200TS60NPBF

IGBT 600V 209A 781W INT-A-PAK
VS-GB200TS60NPBF P1
VS-GB200TS60NPBF P1
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Vishay Semiconductor Diodes Division ~ VS-GB200TS60NPBF

Part Number
VS-GB200TS60NPBF
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 600V 209A 781W INT-A-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-GB200TS60NPBF PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number VS-GB200TS60NPBF
Part Status Active
IGBT Type NPT
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 209A
Power - Max 781W
Vce(on) (Max) @ Vge, Ic 2.84V @ 15V, 200A
Current - Collector Cutoff (Max) 200µA
Input Capacitance (Cies) @ Vce -
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Supplier Device Package INT-A-PAK

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