Images are for reference only.
See Product Specifications for product details.
| Part Number | SQV120N10-3M8_GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7230pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SQV120N06-4M7L_GE3 | Vishay Siliconix | MOSFET N-CH 60V 120A TO262-3 | - | 31825 | Details |
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SQV120N10-3M8_GE3 | Vishay Siliconix | MOSFET N-CH 100V 120A TO262-3 | - | 31825 | Details |