SIR800ADP-T1-GE3

MOSFET N-CH 20V PPAK SO-8
SIR800ADP-T1-GE3 P1
SIR800ADP-T1-GE3 P1
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Vishay Siliconix ~ SIR800ADP-T1-GE3

Part Number
SIR800ADP-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIR800ADP-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 83104 pcs
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Product Parameter

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Part Number SIR800ADP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 50.2A (Ta), 177A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.35 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Vgs (Max) +12V, -8V
Input Capacitance (Ciss) (Max) @ Vds 3415pF @ 10V
FET Feature -
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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