SIB412DK-T1-E3

MOSFET N-CH 20V 9A SC75-6
SIB412DK-T1-E3 P1
SIB412DK-T1-E3 P1
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Vishay Siliconix ~ SIB412DK-T1-E3

Part Number
SIB412DK-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 9A SC75-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIB412DK-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SIB412DK-T1-E3
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 535pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs 34 mOhm @ 6.6A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-75-6L Single
Package / Case PowerPAK® SC-75-6L

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