Images are for reference only.
See Product Specifications for product details.
| Part Number | SIA426DJ-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Rds On (Max) @ Id, Vgs | 23.6 mOhm @ 9.9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SIA421DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 12A SC70-6 | - | 3000 | Details |
 |
SIA425EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 4.5A SC-70-6 | - | 0 | Details |
 |
SIA426DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 4.5A SC70-6 | - | 0 | Details |
 |
SIA427ADJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 12A 6SC-70 | - | 0 | Details |
 |
SIA427DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 12A SC-70-6 | 30000 | Details | |
 |
SIA429DJT-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC-70 | - | 12000 | Details |