Images are for reference only.
See Product Specifications for product details.
| Part Number | SI7107DN-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 450µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 15.3A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI7100DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 8V 35A 1212-8 | - | 0 | Details |
 |
SI7100DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 35A PPAK 1212-8 | - | 0 | Details |
 |
SI7101DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 35A PPAK 1212-8 | - | 6000 | Details |
 |
SI7102DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 35A PPAK 1212-8 | - | 0 | Details |
 |
SI7102DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 35A 1212-8 | - | 6000 | Details |
 |
SI7104DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 35A PPAK 1212-8 | - | 0 | Details |
 |
SI7104DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 35A PPAK 1212-8 | - | 0 | Details |
 |
SI7106DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 | - | 9000 | Details |
 |
SI7106DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 | - | 0 | Details |
 |
SI7107DN-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | - | 0 | Details |
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SI7107DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | - | 0 | Details |
 |
SI7108DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 14A 1212-8 | - | 9000 | Details |