SI5902DC-T1-E3

MOSFET 2N-CH 30V 2.9A 1206-8
SI5902DC-T1-E3 P1
SI5902DC-T1-E3 P1
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Vishay Siliconix ~ SI5902DC-T1-E3

Part Number
SI5902DC-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 30V 2.9A 1206-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI5902DC-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SI5902DC-T1-E3
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A
Rds On (Max) @ Id, Vgs 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™

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