SI3851DV-T1-E3

MOSFET P-CH 30V 1.6A 6-TSOP
SI3851DV-T1-E3 P1
SI3851DV-T1-E3 P1
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Vishay Siliconix ~ SI3851DV-T1-E3

Part Number
SI3851DV-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 30V 1.6A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI3851DV-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI3851DV-T1-E3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 830mW (Ta)
Rds On (Max) @ Id, Vgs 200 mOhm @ 1.8A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

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