SI1419DH-T1-E3

MOSFET P-CH 200V 0.3A SC70-6
SI1419DH-T1-E3 P1
SI1419DH-T1-E3 P1
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Vishay Siliconix ~ SI1419DH-T1-E3

Part Number
SI1419DH-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 200V 0.3A SC70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI1419DH-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI1419DH-T1-E3
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 5 Ohm @ 400mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6 (SOT-363)
Package / Case 6-TSSOP, SC-88, SOT-363

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