SI1304BDL-T1-E3

MOSFET N-CH 30V 0.9A SOT323-3
SI1304BDL-T1-E3 P1
SI1304BDL-T1-E3 P1
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Vishay Siliconix ~ SI1304BDL-T1-E3

Part Number
SI1304BDL-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 0.9A SOT323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI1304BDL-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI1304BDL-T1-E3
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 900mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 15V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 340mW (Ta), 370mW (Tc)
Rds On (Max) @ Id, Vgs 270 mOhm @ 900mA, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-3
Package / Case SC-70, SOT-323

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