SI1011X-T1-GE3

MOSFET P-CH 12V SC-89
SI1011X-T1-GE3 P1
SI1011X-T1-GE3 P1
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Vishay Siliconix ~ SI1011X-T1-GE3

Part Number
SI1011X-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 12V SC-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI1011X-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI1011X-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) 1.2V, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 6V
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 190mW (Ta)
Rds On (Max) @ Id, Vgs 640 mOhm @ 400mA, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490

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