Images are for reference only.
See Product Specifications for product details.
| Part Number | TK9A90E,S4X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 4.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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TK9A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 450V 9A TO-220SIS | 0 | Details | |
 |
TK9A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 550V 8.5A TO-220SIS | - | 0 | Details |
 |
TK9A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9A TO-220SIS | 0 | Details | |
 |
TK9A65W,S5X | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | - | 188 | Details |
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TK9A90E,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | - | 76 | Details |