Images are for reference only.
See Product Specifications for product details.
| Part Number | TK560P60Y,RQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 560 mOhm @ 3.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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TK560A60Y,S4X | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR TO-220SIS PD | - | 200 | Details |
 |
TK560A65Y,S4X | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR TO-220SIS PD | - | 200 | Details |
 |
TK560P60Y,RQ | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR DPAK(OS) PD | - | 4000 | Details |
 |
TK560P65Y,RQ | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR DPAK(OS) PD | - | 4000 | Details |
 |
TK56A12N1,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 120V 56A TO-220 | - | 45 | Details |
 |
TK56E12N1,S1X | Toshiba Semiconductor and Storage | MOSFET N CH 120V 56A TO-220 | - | 0 | Details |