TK4P60DA(T6RSS-Q)

MOSFET N-CH 600V 3.5A DPAK-3
TK4P60DA(T6RSS-Q) P1
TK4P60DA(T6RSS-Q) P1
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Toshiba Semiconductor and Storage ~ TK4P60DA(T6RSS-Q)

Part Number
TK4P60DA(T6RSS-Q)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 3.5A DPAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TK4P60DA(T6RSS-Q) PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number TK4P60DA(T6RSS-Q)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 1.8A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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