Images are for reference only.
See Product Specifications for product details.
| Part Number | TK22E10N1,S1X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TK22E10N1,S1X | Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | - | 432 | Details |