Images are for reference only.
See Product Specifications for product details.
| Part Number | TK17N65W,S1F |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 8.7A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TK1705800000G | Amphenol Anytek | TERM BLK 17P SIDE ENTRY 5MM PCB | - | 34265 | Details |
 |
TK17A80W,S4X | Toshiba Semiconductor and Storage | MOSFET N-CH 800V 17A TO220-3 | - | 395 | Details |
 |
TK17E65W,S1X | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | - | 226 | Details |
 |
TK17E80W,S1X | Toshiba Semiconductor and Storage | MOSFET N-CH 800V 17A TO220-3 | - | 400 | Details |
 |
TK17N65W,S1F | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | - | 150 | Details |