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Toshiba Semiconductor and Storage ~ SSM3J306T(TE85L,F)

Part Number	SSM3J306T(TE85L,F)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	117 mOhm @ 1A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSM
Package / Case	TO-236-3, SC-59, SOT-23-3

Part Number	Manufacturers	Description	PDF	In Stock	View
SSM3J304T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2.3A TSM	-	3000	Details
SSM3J306T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 2.4A TSM	-	3000	Details
SSM3J307T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5A TSM	-	0	Details
SSM3J321T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5.2A TSM	-	0	Details
SSM3J325F,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2A S-MINI	-	0	Details
SSM3J327R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A SOT23F	-	42000	Details
SSM3J328R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A SOT23F	-	318000	Details
SSM3J331R,LF	Toshiba Semiconductor and Storage	MOSFET P CH 20V 4A SOT-23F	-	823252	Details
SSM3J332R,LF	Toshiba Semiconductor and Storage	MOSFET P CH 30V 6A 2-3Z1A	-	33000	Details
SSM3J334R,LF	Toshiba Semiconductor and Storage	MOSFET P CH 30V 4A SOT-23F	-	21000	Details
SSM3J338R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A SOT23F		0	Details
SSM3J351R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 3.5A SOT-23F	-	6000	Details