RQ1C075UNTR

MOSFET N-CH 20V 7.5A TSMT8
RQ1C075UNTR P1
RQ1C075UNTR P1
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Rohm Semiconductor ~ RQ1C075UNTR

Part Number
RQ1C075UNTR
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 20V 7.5A TSMT8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
RQ1C075UNTR.pdf RQ1C075UNTR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RQ1C075UNTR
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Rds On (Max) @ Id, Vgs 16 mOhm @ 7.5A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT8
Package / Case 8-SMD, Flat Lead

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