WPB4001-1E

MOSFET N-CH 500V 26A TO3P3L
WPB4001-1E P1
WPB4001-1E P1
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ON Semiconductor ~ WPB4001-1E

Part Number
WPB4001-1E
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 500V 26A TO3P3L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- WPB4001-1E PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number WPB4001-1E
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 26A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 220W (Tc)
Rds On (Max) @ Id, Vgs 260 mOhm @ 13A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P-3L
Package / Case TO-3P-3, SC-65-3

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