NVGS3130NT1G

MOSFET N-CH 20V 4.2A 6TSOP
NVGS3130NT1G P1
NVGS3130NT1G P1
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ON Semiconductor ~ NVGS3130NT1G

Part Number
NVGS3130NT1G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 20V 4.2A 6TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NVGS3130NT1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 15000 pcs
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Product Parameter

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Part Number NVGS3130NT1G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 935pF @ 16V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 600mW (Ta)
Rds On (Max) @ Id, Vgs 24 mOhm @ 5.6A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6

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