NVD5867NLT4G-TB01

MOSFET N-CH 60V 22A DPAK DPAK
NVD5867NLT4G-TB01 P1
NVD5867NLT4G-TB01 P1
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ON Semiconductor ~ NVD5867NLT4G-TB01

Part Number
NVD5867NLT4G-TB01
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 60V 22A DPAK DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NVD5867NLT4G-TB01 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 11248 pcs
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Product Parameter

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Part Number NVD5867NLT4G-TB01
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 39 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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