NTQS6463R2

MOSFET P-CH 20V 6.8A 8-TSSOP
NTQS6463R2 P1
NTQS6463R2 P1
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ON Semiconductor ~ NTQS6463R2

Part Number
NTQS6463R2
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 20V 6.8A 8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTQS6463R2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTQS6463R2
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 930mW (Ta)
Rds On (Max) @ Id, Vgs 20 mOhm @ 6.8A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)

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