NTLJS3113PT1G

MOSFET P-CH 20V 3.5A 6-WFDN
NTLJS3113PT1G P1
NTLJS3113PT1G P1
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ON Semiconductor ~ NTLJS3113PT1G

Part Number
NTLJS3113PT1G
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 20V 3.5A 6-WFDN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTLJS3113PT1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTLJS3113PT1G
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Rds On (Max) @ Id, Vgs 40 mOhm @ 3A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad

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