NTDV3055L104-1G

MOSFET N-CH 60V 12A IPAK
NTDV3055L104-1G P1
NTDV3055L104-1G P1
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ON Semiconductor ~ NTDV3055L104-1G

Part Number
NTDV3055L104-1G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 60V 12A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTDV3055L104-1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTDV3055L104-1G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 48W (Tj)
Rds On (Max) @ Id, Vgs 104 mOhm @ 6A, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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