FDP8D5N10C

FET ENGR DEV-NOT REL
FDP8D5N10C P1
FDP8D5N10C P1
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ON Semiconductor ~ FDP8D5N10C

Part Number
FDP8D5N10C
Manufacturer
ON Semiconductor
Description
FET ENGR DEV-NOT REL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDP8D5N10C PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 28071 pcs
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Product Parameter

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Part Number FDP8D5N10C
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 76A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2475pF @ 50V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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