FDN5618P_G

INTEGRATED CIRCUIT
FDN5618P_G P1
FDN5618P_G P1
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See Product Specifications for product details.

ON Semiconductor ~ FDN5618P_G

Part Number
FDN5618P_G
Manufacturer
ON Semiconductor
Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDN5618P_G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 7082 pcs
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Product Parameter

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Part Number FDN5618P_G
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 170 mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 30V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT-3
Package / Case TO-236-3, SC-59, SOT-23-3

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