PHKD3NQ10T,518

MOSFET 2N-CH 100V 3A 8SOIC
PHKD3NQ10T,518 P1
PHKD3NQ10T,518 P1
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Nexperia USA Inc. ~ PHKD3NQ10T,518

Part Number
PHKD3NQ10T,518
Manufacturer
Nexperia USA Inc.
Description
MOSFET 2N-CH 100V 3A 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
PHKD3NQ10T,518.pdf PHKD3NQ10T,518 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number PHKD3NQ10T,518
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 90 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 20V
Power - Max 2W
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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