Images are for reference only.
See Product Specifications for product details.
| Part Number | JANTX1N5819UR-1/TR |
|---|---|
| Part Status | Active |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 45V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 490mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 50µA @ 45V |
| Capacitance @ Vr, F | 70pF @ 5V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AB, MELF (Glass) |
| Supplier Device Package | DO-213AB (MELF, LL41) |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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JANTX1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO5 | - | 0 | Details |
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JANTX1N1184R | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | - | 0 | Details |
|
JANTX1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO5 | - | 0 | Details |
|
JANTX1N1186R | Microsemi Corporation | SILICON RECTIFIER | - | 1226 | Details |
|
JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | - | 0 | Details |
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JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 87 | Details |
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JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 100 | Details |
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JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 39 | Details |
|
JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
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JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 36 | Details |
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JANTX1N1204AR | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 4 | Details |
|
JANTX1N1206A | Microsemi Corporation | DIODE GEN PURP 600V 12A DO203AA | - | 0 | Details |