Images are for reference only.
See Product Specifications for product details.
| Part Number | APT70GR65B2SCD30 |
|---|---|
| Part Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 134A |
| Current - Collector Pulsed (Icm) | 260A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A |
| Power - Max | 595W |
| Switching Energy | - |
| Input Type | - |
| Gate Charge | 305nC |
| Td (on/off) @ 25°C | 19ns/170ns |
| Test Condition | 433V, 70A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | T-MAX™ [B2] |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT70GR120B2 | Microsemi Corporation | IGBT 1200V 160A 961W TO247 | - | 0 | Details |
 |
APT70GR120J | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | - | 0 | Details |
 |
APT70GR120JD60 | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | - | 16 | Details |
 |
APT70GR120L | Microsemi Corporation | IGBT 1200V 160A 961W TO264 | - | 45 | Details |
 |
APT70GR65B | Microsemi Corporation | IGBT 650V 134A 595W TO-247 | - | 52 | Details |
|
APT70GR65B2DU40 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |
|
APT70GR65B2SCD30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |