Images are for reference only.
See Product Specifications for product details.
| Part Number | APT45GP120B2DQ2G |
|---|---|
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 113A |
| Current - Collector Pulsed (Icm) | 170A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
| Power - Max | 625W |
| Switching Energy | 900µJ (on), 905µJ (off) |
| Input Type | Standard |
| Gate Charge | 185nC |
| Td (on/off) @ 25°C | 18ns/100ns |
| Test Condition | 600V, 45A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT45GP120B2DQ2G | Microsemi Corporation | IGBT 1200V 113A 625W TMAX | - | 348 | Details |
 |
APT45GP120BG | Microsemi Corporation | IGBT 1200V 100A 625W TO247 | - | 57 | Details |
 |
APT45GP120J | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | - | 0 | Details |
 |
APT45GP120JDQ2 | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | - | 0 | Details |
 |
APT45GR65B | Microsemi Corporation | IGBT 650V 92A 357W TO-247 | - | 62 | Details |
 |
APT45GR65B2DU30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |
|
APT45GR65BSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |
|
APT45GR65SSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |